They also would like to use low-leakage transistors to reduce the refresh power demands of large memory arrays. Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable ...

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...

VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...

Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...

Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...

SAN JOSE, Calif., May 13, 2024 /PRNewswire/ -- NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body ...